TSMC would use “gate all around transistors” for 2nm node

TSMC 2nm GAA process development ahead of schedule: TSMC’s development of 2nm process technology, which is already out of its pathfinding …
TSMC would use

Yes Sir we’re already talking about 2nm folks. DigiTimes has an interesting piece up claiming that the 2nm node would introduce something called “gate all around transistors” replacing FinFET with GAA transistors.

TSMC 2nm GAA process development ahead of schedule: TSMC’s development of 2nm process technology, which is already out of its pathfinding mode, is ahead of schedule, according to industry sources. TSMC would switch from the 2N node from the currently common finfet transistors to so-called gaafet transistors, of which nanowires are a alternative. Ultimately, the continued use of finfet transistors will pose unconquerable difficulties. With the current finfet transistors, further reduction produces too much leakage of current. The gate encloses the channel of the finfet transistor on three sides.

Thorough enclosure of the channel, as is the case here, solves leakage current complications. The disadvantage of such transistors is that they are far more complex to produce though. Meanwhile, the 3N process should be well underway by the end of 2022.

TSMC would use

BCD Power IC Consumption Market Size to Witness Huge Growth by 2027 | By Top Leading …

By Top Leading Vendors – STMicroelectronics, Maxim Integrated, Texas Instruments, TSMC, – The Daily Chronicle …
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