Tag: International Electron Devices Meeting

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Recent Related Articles to International Electron Devices Meeting

Manufacturing Bits: Nov. 25

Added to Collection on: 2020-11-25 08:03:45

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Emerging technologies
Quantum information science
Electronics industry
Theoretical computer science
Science and technology
Quantum computing
Units of information
Computational complexity theory
Qubit
International Electron Devices Meeting
Resistive random-access memory
Lidar
Samsung

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KNU Researchers Develop the World's Highest Speed Semiconductor Electronic Device

Added to Collection on: 2021-02-18 09:00:00

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Science and technology
Electronics industry
Technology
Semiconductor devices
MOSFETs
International Electron Devices Meeting
6G
Semiconductor device
Transistor
High-electron-mobility transistor
Semiconductor
Dae Hyun Kim

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IBM unveils breakthrough 2nm chip technology

Added to Collection on: 2021-05-06 14:26:15

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Technology
Computing
Science and technology
Digital electronics
IBM
5 nm process
Integrated circuit
Intel
7 nm process
International Electron Devices Meeting

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Intel's Component Keys for Pushing Moore's Law - The Next Platform

Added to Collection on: 2021-12-13 20:23:52

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Technology
Computing
Electronics industry
Integrated circuits
MOSFETs
Digital electronics
Semiconductor devices
International Electron Devices Meeting
Electronic design
Moore's law
Transistor
CMOS

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IEDM: 14nm embedded MRAM has record energy efficiency ... - eeNews Analog

Added to Collection on: 2022-10-26 02:20:26

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Semiconductor devices
Computer memory
Electrical components
Semiconductors
Nonvolatile Memory
Emerging technologies
Spintronics
Everspin Technologies
Magnetoresistive random-access memory
Non-volatile random-access memory
International Electron Devices Meeting
FinFET

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Samsung MRAM, Imec FeRAM, CEA Leti RRAM Neuromorphic Computing At The 2022 IEDM

Added to Collection on: 2022-12-09 15:54:17

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Computer memory
Emerging technologies
Nonvolatile Memory
Computer data storage
Articles
Computer data
Ferroelectric RAM
Magnetoresistive random-access memory
Resistive random-access memory
Ferroelectric capacitor
International Electron Devices Meeting
Neuromorphic engineering

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Intel, TSMC both set to report on stacked CFETs at IEDM ... - eeNews Europe

Added to Collection on: 2023-10-03 15:50:29

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Semiconductor devices
Digital electronics
Field-effect transistors
MOSFETs
2 nm process
Integrated circuits
International Electron Devices Meeting
3 nm process
CMOS
Transistor
Fin field-effect transistor
Logic gate
Intel

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2023 MRAM Forum showcases MRAM for automotive and other applications

Added to Collection on: 2023-12-21 14:56:35

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Computer memory
Nonvolatile Memory
Emerging technologies
Spintronics
Everspin Technologies
Magnetoresistive RAM
Non-volatile random-access memory
Resistive random-access memory
International Electron Devices Meeting
Random-access memory
Spin-transfer torque

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